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NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
I ZSM
non-repetitive peak reverse square wave;
current
t p = 1 ms
PESD3V3L4UF
-
0.9
A
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
-
0.8
A
PESD5V0L4UG
PESD5V0L4UW
P ZSM
non-repetitive peak reverse square wave;
-
6
W
Per device
power dissipation
t p = 1 ms
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 65
? 65
150
+150
+150
° C
° C
° C
[1]
[2]
[3]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Table 7. ESD maximum ratings
T amb = 25 ° C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge voltage
IEC 61000-4-2
[1][2][3]
-
20
kV
(contact discharge)
MIL-STD-883 (human
-
10
kV
body model)
[1]
[2]
[3]
Device stressed with ten non-repetitive ESD pulses.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
PESDXL4UF_G_W_4
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 15 kV (air); > 8 kV (contact)
> 4 kV
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 February 2008
4 of 17
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